Process temperature：

70℃ – 300℃

ALD performance：

12 inch (compatible with small size) wafer process cavity

Achieving optimal film coverage on high aspect ratio substrates

Modular configurations such as ICP ion source and Loadlock

Depositable thin films: oxides, nitrides, fluorides, metal elements, doped films, laminated films, etc., suitable for various development needs of university research institutes and enterprise R&D departments

High cleanliness wafer and non particle coating scheme can ensure the surface cleanliness of the substrate during the coating process

Loading method：

Loadlock automatic loading and unloading of substrates